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2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999 Features
* Low on-resistance R DS = 90 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK3161(L),2SK3161(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 200 20 15 60 15 15 15 75 150 -55 to +150
Unit V V A A A A mJ W C C
EAR
Pch Tch
Tstg
1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
Electrical Characteristics (Ta = 25C)
Item Symbol Min 200 20 -- -- 1.0 -- -- 16 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max -- -- 10 10 2.5 115 125 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 diF/ dt = 50 A/ s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
2SK3161(L),2SK3161(S)
Main Characteristics
Power vs. Temperature Derating 80
100
Maximum Safe Operation Area
Pch (W)
I D (A)
30 10 3 1
DC
60
s 0 1 m s s
10
PW
Op era
10
Channel Dissipation
Drain Current
=1
40
tio
0m
Tc
n(
s(
1s
20
0.3 Operation in this area is 0.1 limited by R DS(on) 0.03 0.01 Ta = 25 C 1 2 5
=2
ho
)
t)
5C
0
50
100
150 Tc (C)
200
10 20
50 100 200 500 V DS (V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics 50 Pulse Test 10 V 6V 4V 3.5 V 30 20
Typical Transfer Characteristics V DS = 10 V Pulse Test
I D (A)
ID Drain Current
(A)
3V
40
16
12
Drain Current
20
8 Tc = 75C -25C 25C
10 VGS =2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
4
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
3
2SK3161(L),2SK3161(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
4
Drain to Source On State Resistance R DS(on) (m )
5
200 VGS = 4 V 100 10 V 50
3
2 I D = 15 A 1 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V)
20 10 1 2 50 10 20 5 Drain Current I D (A) 100
Static Drain to Source on State Resistance R DS(on) ( m)
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 5, 10 A 15 A 200 V GS = 4 V 5, 10 A 100 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 15 A
Forward Transfer Admittance vs. Drain Current 50 25 C 20 Tc = -25 C 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 75 C
300
4
2SK3161(L),2SK3161(S)
Body-Drain Diode Reverse Recovery Time 1000 10000 di / dt = 50 A / s V GS = 0, Ta = 25C 5000 Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
2000 1000 500 200 100 50
Ciss
200 100 50
Coss Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50
20 10 0.1
20 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Switching Characteristics
V DS (V)
V GS (V)
200 V GS V DS V DD = 150 V 100 V 50 V
20
500 300
t d(off) tf
Switching Time t (ns)
160
16
100 30 10
Drain to Source Voltage
120
12
Gate to Source Voltage
tr t d(on)
80
I D = 15 A V DD = 150 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nc)
8
40
4 0 200
3 1 0.1
V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1% 0.3 3 1 Drain Current 10 I D (A) 30 100
0
5
2SK3161(L),2SK3161(S)
Reverse Drain Current vs. Source to Drain Voltage
Repetive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 20 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50
20
Reverse Drain Current I DR (A)
16 10 V 12
16
12
8
V GS = 0, -5 V 5V Pulse Test
8
4
4 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
V SD (V)
Channel Temperature Tch (C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
EAR =
1 2 * L * I AP * 2
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
6
2SK3161(L),2SK3161(S)
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
7
2SK3161(L),2SK3161(S)
Package Dimensions
Unit: mm
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
11.3 0.5
8.6 0.3 10.0 +0.3 -0.5
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
(1.5)
11.0 0.5
(1.5)
0.76 0.1
(1.5)
8.6 0.3 10.0 +0.3 -0.5
1.2 0.2 0.86 +0.2 -0.1
1.27 0.2
2.59 0.2
1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5
3.0 +0.3 -0.5
0.1 +0.2 -0.1 2.59 0.2 0.4 0.1
2.54 0.5
2.54 0.5
L type
S type
Hitachi Code EIAJ JEDEC
LDPAK -- --
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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